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| MCC Features * * omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2N3904 Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View NPN General Purpose Amplifier TO-92 A E C B E Electrical Characteristics @ 25C Unless Otherwise Specified Symbol Parameter Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10Adc, IE=0) Emitter-Base Breakdown Voltage (I E=10Adc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=50mAdc, VCE=1.0Vdc) (I C=100mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) Base-Emitter Saturation Voltage (I C=10mAdc, IB=1.0mAdc) (I C=50mAdc, IB=5.0mAdc) Current Gain-Bandwidth Product (I C=10mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=5.0Vdec, IE=0, f=1.0MHz) Input Capacitance (VBE=0.5Vdc, IC=0, f=1.0MHz) Noise Figure (IC=100Adc, VCE=5.0Vdc, RS=1.0k f=10Hz to 15.7kHz) Delay Time (VCC=3.0Vdc, VBE=0.5Vdc Rise Time IC=10mAdc, IB1=1.0mAdc) Storage Time (VCC=3.0Vdc, IC=10mAdc Fall Time IB1=IB2=1.0mAdc) 300s, Duty Cycle 2.0% Min 40 60 6.0 50 50 Max Units Vdc Vdc Vdc nAdc nAdc OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX B ON CHARACTERISTICS hFE 40 70 100 60 30 C 300 VCE(sat) 0.2 0.3 0.65 0.85 0.95 Vdc D VBE(sat) Vdc SMALL-SIGNAL CHARACTERISTICS fT Cobo Cibo NF 300 4.0 8.0 5.0 MHz G pF pF dB DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 DIMENSIONS MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width 35 35 200 50 ns ns ns ns MAX .185 .185 --.020 .145 .105 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com 2N3904 DC Current Gain vs Collector Current 220 VCE = 5.0V 200 160 hFE 120 80 40 VBE(ON) - (V) 1.2 1.0 0.8 T = 25C A 0.6 0.4 TA = 100C 0.2 0 0.1 MCC Base-Emitter ON Voltage vs Collector Current VCE = 5.0V 0.1 1 IC (mA) 10 100 1.0 IC - (mA) 10 100 Collector Saturation Volatge vs Collector Current .150 .125 .100 VCE(SAT) - (V) .075 .050 .025 0 0.1 VBE(SAT) - (V) IC/IB = 10 TA = 25C 1.2 1.1 1.0 .90 .80 .70 Base Saturation Voltage vs Collector Current IC/IB = 10 TA = 25C 1.0 IC - (mA) 10 100 .60 0.1 1.0 IC - (mA) 10 100 Collector Cutoff Current vs Ambient Temperature 1000 1.0 8 VCB = 20V 100 ICBO - (mA) 10 2 1.0 0 25 50 75 TA - (C) 100 125 150 pF 6 Capacitance vs Reverse Bias Voltage f = 1 MHz 4 CIB COB 0 0.1 1.0 Volts - (V) 10 www.mccsemi.com 2N3904 Maximum Power Dissipation vs Ambient Temperature 800 12 10 600 TO-92 PD(MAX) - (mW) 400 NF - (dB) 6 4 200 SOT-23 0 0 50 100 TA - (C) Contours of Constant Gain Bandwidth Product (fT) 12 10 8 VCE - (V) 6 4 2 0 0.1 10 0.1 hfe 100 1000 150 200 2 0 0.1 8 IC = 1.0mA Noise Figure vs Source Resistance MCC IC = 100A f = 1.0kHz 1.0 10 RS - (k) Current Gain VCE = 10V f = 1.0kHz 100 10 IC - (mA) *100MHz increments from 200 to 500MHz 1.0 100 1.0 IC - (mA) 10 Noise Figure vs Frequency 6 VCE = 5.0V 5 4 NF - (dB) 3 2 1 0 IC = 50A RS = 1.0k IC = 100A RS = 500 100 T - (ns) 1000 Switching Times vs Collector Current IB1 = IB2 = IC/10 tr ts IC = 0.5mA RS = 200 10 tf 0.1 1.0 f - (kHz) 10 100 1.0 1.0 10 IC - (mA) 100 www.mccsemi.com 2N3904 Input Impedance 10 VCE = 10V f = 1.0kHz 100 Output Admittance MCC VCE = 10V f = 1.0kHz hoe - () 10 hie - (k) 1.0 0.1 0.1 1 1.0 IC - (mA) 10 0.1 1.0 IC - (mA) 10 Voltage Feedback Ratio 100 1000 Turn On and Turn Off Times vs Collector Current hfe - (X10 ) 10 T - (ns) -4 100 toff ton 10 ton IB1 = IC/10 VBE(OFF) = 0.5V toff IB1 = IB2 = IC/10 10 IC - (mA) 100 1.0 0.1 1.0 IC - (mA) 10 1.0 1.0 www.mccsemi.com |
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